Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
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使用注入和“先进”Al/Ti 金属化在 AlGaN/GaN 结构上实现低电阻欧姆接触
DOI：
10.1063/1.123927
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发表时间：
1999
影响因子：
4
通讯作者：
G. Sullivan
中科院分区：
文献类型：
--
作者：
D. Qiao;Z. Guan;J. Carlton;S. Lau;G. Sullivan
研究了Al/Ti在AlGaN/GaN异质结场效应晶体管(HFET)上的欧姆接触形成过程。对直接注入和氮化铝盖层注入进行了研究。与通过AlN注入相比，直接注入在降低接触电阻方面更有效。本研究采用Al(200A)/Ti(1500A)双层结构，称为“推进”金属化，以利用几乎所有的顶层AlGaN层，以便于载流子进入下面的GaN层。将直接注入和推进金属化相结合，在AlGaN层厚约340A，Al含量至少为22%的高频晶体管结构上，可以很容易地获得0.25Ω mm(∼5.6×10−6 Ω cm~2)量级的低接触电阻。
The ohmic contact formation of Al/Ti on AlGaN/GaN heterostructure field effect transistors (HFETs) with and without Si implantation was investigated. Direct implantation and implantation through an AlN capping layer were studied. Compared to implantation through AlN, direct implantation is more effective in reducing the contact resistance. An Al(200 A)/Ti(1500 A) bilayer structure, called the “advancing” metallization, was used in this investigation to take advantage of consuming nearly all the top AlGaN layers for easy carrier access to the GaN layer underneath. Combining the direct implantation and the advancing metallization, low contact resistance of the order of 0.25 Ω mm (∼5.6×10−6 Ω cm2) can be readily obtained on HFET structures with an AlGaN layer about 340 A thick and with an Al fraction of at least 22%.