Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux
Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux
复制标题
钾熔剂中制备的闪锌矿型立方氮化镓单晶
DOI：
10.1143/jjap.39.l146
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
M. Shimada
中科院分区：
文献类型：
--
作者：
H. Yamane;T. Kajiwara;T. Sekiguchi;M. Shimada
在750°C下通过Ga和N2在钾助熔剂中的反应合成了zin-GaN型立方GaN（c-GaN，空间群F43 m，晶格参数a=4.5062（9）nm）单晶。通过单晶X射线衍射分析晶体结构，其中R1因子为2.1%（R1= λ Fo-Fc λ/λ| Fo|其中Fo是观察到的结构因子，Fc是计算出的结构因子）。在25°C下测量的阴极发光光谱中，在3.20 eV处观察到近带边发射的峰。
Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F43m, lattice parameter a=4.5062(9) Å) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1=Σ∥Fo-Fc∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20 eV in the cathodoluminescence spectrum measured at 25°C.