Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature
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DOI：
10.1063/5.0015358
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发表时间：
2020-05
影响因子：
4
通讯作者：
Kengo Takase;L. D. Anh;K. Takiguchi;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
Kengo Takase;L. D. Anh;K. Takiguchi;Masaaki Tanaka
我们在 (Ga,Fe)Sb / InAs（厚度 $t_\mathrm{InAs}$ nm）/(Ga,Fe)Sb 三层异质结构中展示了具有面内电流 (CIP) 配置的自旋阀磁阻，其中 (Ga,Fe)Sb 是具有高居里温度 ($T_\mathrm{C}$) 的铁磁半导体 (FMS)。在 $t_\mathrm{InAs}$ = 3 nm 的样品中，在 3.7 K 处清晰地观察到具有开放小环的 MR 曲线，这源于 (Ga,Fe)Sb 层的平行 - 反平行磁化强度切换以及 (Ga,Fe)Sb / InAs 界面处的自旋相关散射。由于界面散射的增强，MR 比随着 $t_\mathrm{InAs}$ 的减小（从 9 nm 到 3 nm）而增加（从 0.03% 到 1.6%）。这是铁掺杂 FMS 异质结构中自旋阀效应的首次演示，为这些高 $T_\mathrm{C}$ FMS 的器件应用铺平了道路。
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing $t_\mathrm{InAs}$ (from 9 to 3 nm) due to the enhancement of the interface scattering. This is the first demonstration of the spin-valve effect in Fe-doped FMS heterostructures, paving the way for device applications of these high- $T_\mathrm{C}$ FMSs.