Ag Diffusion in Low-k Materials (BCN and SiOC) and Its Challenges for Future Interconnection
Ag Diffusion in Low-k Materials (BCN and SiOC) and Its Challenges for Future Interconnection
复制标题
低 k 材料（BCN 和 SiOC）中的银扩散及其对未来互连的挑战
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
T. Sugino
中科院分区：
文献类型：
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作者：
M. K. Mazumder;Ryota Moriyama;D. Watanabe;C. Kimura;H. Aoki;T. Sugino
研究了银和铜在低k膜(BCN和SiOC)中的扩散，为将来的互连做准备。由辉光放电发射光谱(GDOES)得到的退火后的深度分布表明，Ag在BCN薄膜中的扩散速率小于在SiOC薄膜中的扩散速率。研究还发现，铜在SiOC膜中比在BCN膜中更容易扩散。用有无退火的银或铜电极测量了电流-电压(I-V)特性。BCN薄膜的漏电流随退火前后的变化小于SiOC薄膜。为了改善RC延迟时间，可以使用银，因为它的电阻率比铜低；BCN介质膜也可以使用，因为它的介电常数比SiOC介质膜的介电常数低1.9。
The diffusion of Ag and Cu in low-k films (BCN and SiOC) was investigated for future interconnections. From the depth profiles obtained by glow discharge optical emission spectroscopy (GDOES) after annealing, it was found that the rate of Ag diffusion in the BCN film was less than that in the SiOC film. It was also found that Cu diffused more easily in the SiOC film than in the BCN film. Current–voltage (I–V) characteristics were measured using a Ag or Cu electrode with and without annealing. The BCN film leakage current variation with and without annealing was less than that of the SiOC film. To improve RC delay time, Ag can be used because it has a lower resistivity than Cu; the BCN dielectric film can also be used because of its lower dielectric constant of 1.9 than that of the SiOC dielectric film.