Caractérisation du contact Mo/AsGa élaboré par pulvérisation ionique
Caractérisation du contact Mo/AsGa élaboré par pulvérisation ionique
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接触 Mo/As Ga 粉末的特性
DOI：
10.1051/rphysap:01988002305093300
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发表时间：
1988
影响因子：
3.7
通讯作者：
C. Dupas
中科院分区：
文献类型：
--
作者：
F. Meyer;E. Vélu;C. Pellet;C. Schwebel;C. Dupas
2014通过俄歇光谱、电阻率、I（V）和C（V）测量研究了离子束溅射沉积条件对n-AsGa上钼接触特性的影响。在室温下，观察到逐层生长。当温度高于200 °C时，发生相互扩散。电阻率测量在低温下（0.5 K T 4.2 K）平行于6 nm厚的Mo /AsGa薄膜的证据的热变化的电导率的线性对日志T和超导波动的发病。与Mo/Si的比较给出了关于金属膜的质量的信息。发现肖特基势垒的I（V）和C（V）特性受温度淀积、淀积后退火和稀有气体性质的影响。结果表明，离子束溅射Mo/AsGa界面没有表现出任何粘附问题，即使在550 °C下加工。Revue Phys.Appl.23（1988）933-940 MAI 1988，
2014 The effect of ion beam sputtered deposition conditions on the characteristics of molybdenum contacts on n-AsGa are investigated by Auger spectroscopy, resistivity, I(V) and C (V ) measurements. At room temperature a layer by layer growth is observed. For temperatures greater than 200 °C interdiffusion occurs. Resistivity measurements at low temperature (0.5 K T 4.2 K ) parallel to 6 nm thick Mo /AsGa films evidence a thermal variation of the conductivity linear versus Log T and the onset of superconducting fluctuations. A comparison with Mo/Si gives informations about the quality of the metallic films. The I (V ) and C (V ) properties of Schottky barriers are found to be influenced by temperature deposition, post deposition annealing and nature of the rare gas. It is shown that the ion beam sputtered Mo/AsGa interface does not exhibit any adhesion problem, even when elaborated at 550 °C. Revue Phys. Appl. 23 (1988) 933-940 MAI 1988,