The in?nite wedge representation and the reciprocity law for algebraic curves
The in?nite wedge representation and the reciprocity law for algebraic curves
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代数曲线的无限楔表示和互易律
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
V. Kac
中科院分区：
文献类型：
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作者：
E. Arbarello;C. Deconcini;V. Kac
公开了一种半导体器件，特别是涉及晶体管，其具有针对短的高功率反向瞬变的改进的保护。这种改进是提供二次击穿击穿模式的结果，该击穿模式在操作时排除了雪崩模式。在改进的器件中，击穿击穿电流导致关断耗散在器件的整个区域中基本均匀。二次击穿击穿的提供是通过减少器件端部区域之一中的总掺杂并通过用合适的金属接触替换传统的重掺杂半导体端部区域来实现的。该技术优于先前描述的通过减少基本杂质的数量来实现初级击穿击穿的方法，因为这种方法不能允许独立控制器件的电流增益。
There is disclosed a semiconductor device, with especial reference to a transistor, with improved protection against short high-power reverse transients. This improvement is the result of providing a secondary punch-through breakdown mode which operates to the exclusion of an avalanche mode. In the improved device, punch-through breakdown current causes turn-off dissipation to be substantially uniform throughout the area of the device. The provision of a secondary punch-through breakdown is accomplished by reducing the total doping in one of the end regions of the device and by replacing the conventional heavily-doped semiconductor end regions with a suitable metallic contact. This technique is superior to previously described methods for accomplishing primary punch-through breakdown by reducing the number of base impurities because such an approach cannot allow independent control of the current gain of the device.