Effects of Si and Ti impurities on electrical properties of sol-gel-derived amorphous SrTa2O6 thin films by UV/O3 treatment
Effects of Si and Ti impurities on electrical properties of sol-gel-derived amorphous SrTa2O6 thin films by UV/O3 treatment
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Si 和 Ti 杂质对 UV/O3 处理溶胶凝胶法非晶 SrTa2O6 薄膜电性能的影响
DOI：
10.1007/s00339-012-7425-1
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Kiyoshi Uchiyama and Yukiharu Uraoka
中科院分区：
文献类型：
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作者：
Li Lu;Takashi Nishida;Masahiro Echizen;Yasuaki Ishikawa;Kiyoshi Uchiyama and Yukiharu Uraoka
在500á░C的低温下制备了Sol-Gel法制备的SrTa2O6薄膜。为了改善其漏电流特性，从室温到290á░C进行了额外的UV/O3辅助退火处理，在290á░C下处理的薄膜的漏电流非常小，比未经处理的薄膜低6个数量级。在UV/O_3辅助退火过程中，Si和Ti离子从衬底扩散到SrTa_2O_6薄膜中，占据了Ta~(5+)位，从而产生了Si−和Ti−。在290á░C的加热温度下，大量的钛离子扩散到整个薄膜中。这些钛离子促进了和的非活性组合的产生，从而大大减少了氧空位(Vo)。因此，显著降低了漏电流。
Sol–gel-derived SrTa2O6thin films were fabricated at a low temperature of 500á░C. To improve their leakage current properties, additional UV/O3-assisted annealing was performed from room temperature to 290á░C. UV/O3treatment at 290á░C gave a very low leakage current that was six orders of magnitude lower than that of an untreated thin film. During UV/O3-assisted annealing, Si and Ti ions diffused from the substrates into the SrTa2O6thin films and occupied the Ta5+sites, subsequently generating Si−and Ti−. At a heating temperature of 290á░C, large amounts of Ti ions diffused throughout the SrTa2O6thin film. These Ti ions contributed to the generation of inactive combinations ofand, which greatly reduced oxygen vacancies (Vo). Thus, the leakage current was significantly reduced.