Control of Void Formation in 4H-SiC Solution Growth
Control of Void Formation in 4H-SiC Solution Growth
复制标题
4H-SiC 溶液生长中空洞形成的控制
DOI：
10.4028/www.scientific.net/msf.717-720.57
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
T. Mitani;Masayuki Okamura;Tetsuo Takahashi;N. Komatsu;Tomohisa Kato;H. Okumura
用二次离子质谱仪和拉曼散射研究了溶液生长的4H-碳化硅晶体中空穴的形成。很明显，周围的Ar气体被填充在空隙中，溶剂(Si)部分保留。结果表明，溶解在溶剂中的Ar发生汽化并形成气泡。在晶体生长前沿捕获的气泡被认为是以空洞的形式并入生长的晶体中的。我们还发展了以下抑制空穴形成的方法：(1)浸渍种子晶体，使生长前沿朝上；(2)在He气氛下生长；(3)在晶体生长之前对溶剂进行高温处理。
Void formation in 4H-SiC crystals grown from solution has been investigated by secondary ion mass spectrometry and Raman scattering. It becomes clear that ambient Ar gas is filled in voids and the solvent (Si) partially remains. The result indicates that Ar dissolved in the solvent vaporizes and forms bubbles. The trapped bubbles at the crystal growth front are considered to be incorporated in the growing crystal as voids. We also have developed following methods for suppression of the void formation; (1) dipping seed crystals so that the growth front faces upward, (2) growth under He atmosphere, and (3) the high temperature treatment of the solvent before crystal growth.