On the Electron-Phonon Interactions in Graphene
On the Electron-Phonon Interactions in Graphene
复制标题
关于石墨烯中的电子-声子相互作用
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
B. S. Kandemir
中科院分区：
文献类型：
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作者：
B. S. Kandemir
研究了石墨烯中电子-E2 g声子耦合产生的手征极化子和电子-A1 g声子耦合产生的微带隙。本文在Lee-Low-Pines理论的框架内提出了一种计算电子-声子系统基态的解析方法。我们发现，石墨烯的简并能带结构促进了手性极化子的形成。在我们的理论分析中，我们还表明，电荷载流子与最高频率的区域边界声子模式与A1 g对称性的相互作用诱导的石墨烯的二维布里渊区的角落处的微型带隙。
Chiral polaron formation arising from the electron-E2g phonon coupling and the mini band gap formation due to electron-A1g phonon coupling are investigated in pristine graphene. We present an analytical method to calculate the ground-state of the electron-phonon system within the framework of the Lee-Low-Pines theory. We show that the degenerate band structure of the graphene promotes the chiral polaron formation. Within our theoretical analysis, we also show that the interaction of charge carriers with the highest frequency zone-boundary phonon mode with A1g -symmetry induces a mini band gap at the corners of the two-dimensional Brillouin zone of the graphene.