Photoluminescence from impurity codoped and compensated Si nanocrystals
Photoluminescence from impurity codoped and compensated Si nanocrystals
复制标题
DOI：
10.1063/1.2135214
复制
发表时间：
2005-11
影响因子：
4
通讯作者：
M. Fujii;Y. Yamaguchi;Y. Takase;Keiichi Ninomiya;S. Hayashi
中科院分区：
文献类型：
--
作者：
M. Fujii;Y. Yamaguchi;Y. Takase;Keiichi Ninomiya;S. Hayashi
研究了B和P共掺杂和补偿的Si纳米晶的光致发光（PL）特性。纳米晶体中载流子的补偿通过红外区域限制载流子光吸收的湮灭得到证实。在共振激发条件下获得的PL光谱中，共掺杂样品没有表现出与动量守恒声子相关的结构，这在纯硅纳米晶体中可以清楚地观察到。结果强烈表明，在杂质共掺杂硅纳米晶中，非声子准直接光学跃迁是电子-空穴对的主要复合路径，因此杂质共掺杂是进一步提高硅纳米晶PL效率的可能方法。
Photoluminescence (PL) properties of B and P codoped and compensated Si nanocrystals were studied. The compensation of carriers in nanocrystals was confirmed by the annihilation of confined-carrier optical absorption in the infrared region. In the PL spectra obtained under the resonant excitation condition, the codoped samples did not exhibit structures related to momentum-conserving phonons, which were clearly observed for pure Si nanocrystals. The result strongly suggests that in impurity codoped Si nanocrystals, nonphonon quasidirect optical transition is the dominant recombination path for electron-hole pairs, and thus impurity codoping is a possible approach to further improving PL efficiency of Si nanocrystals.