Physical failure analysis to distinguish EOS and ESD failures
Physical failure analysis to distinguish EOS and ESD failures
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物理故障分析以区分 EOS 和 ESD 故障
DOI：
10.1109/ipfa.2002.1025613
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
N. M. Iyer
中科院分区：
文献类型：
--
作者：
Tung Chih Hang;Cheng Cheng Kou;M.K. Radhakrishnan;N. M. Iyer
一个系统的物理失效分析方法可以应用于区分在亚微米硅器件中由EOS和ESD引起的损伤。即使观察到的电气故障模式是相同的，通过彻底的分析，知道故障特征的差异，以及采用特定的方法，它被发现可以区分EOS和ESD故障在很大程度上。现场失败和模拟失败的情况下进行了研究，以建立故障签名的差异。
A systematic physical failure analysis methodology can be applied to distinguish the damage induced by EOS and ESD in sub-micron silicon devices. Eventhough the electrical failure modes observed are identical, by a thorough analysis knowing the differences in failure signatures, as well as employing specific methods, it is found possible to distinguish between EOS and ESD failures to a great extent. Both field failed and simulated failed cases have been studied to establish the difference in failure signatures.