Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy
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分子束外延生长 ZnSe/MgS 应变层超晶格

DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
G. Duggan
G. Duggan
中科院分区：
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文献类型：
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作者：
N. Teraguchi;H. Mouri;Y. Tomomura;A. Suzuki;H. Taniguchi;J. Rorison;G. Duggan

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用分子束外延方法生长了ZnSe/MgS应变层超晶格。当MGS厚度大于3个单层时，SLS的结晶质量下降。观察到由于量子化能级之间的跃迁而产生的光致发光。在77K下观察到了高于3.0 eV的光致发光峰，与四元材料的光致发光峰能量相当。
Growth of ZnSe/MgS strained‐layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material.