Optical studies of ZnSe/ZnMgSSe-based quantum-well semiconductor heterostructures
Optical studies of ZnSe/ZnMgSSe-based quantum-well semiconductor heterostructures
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ZnSe/ZnMgSSe基量子阱半导体异质结构的光学研究
DOI：
10.1134/1.1130438
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发表时间：
1998
影响因子：
0.6
通讯作者：
G. Landwehr
中科院分区：
文献类型：
--
作者：
A. Platonov;V. Kochereshko;D. Yakovlev;U. Zehnder;W. Ossau;W. Faschinger;G. Landwehr
本文介绍了基于ZnSe/ZnMgSSe的异质结构的光学研究结果。证明了利用这些化合物制备具有强激子特征的高质量量子阱结构的可能性。通过对反射光谱的分析，得到了激子参数：谐振频率、振子强度和激子线阻尼。用磁光光谱测定了激子的结合能。所研究的样品具有较高的结构完美性和较小的激子共振不均匀宽度。
Results of an optical study of heterostructures based on new compounds, ZnSe/ZnMgSSe, are presented. The possibility of using these compounds to produce high-quality quantum-well structures having strong exciton features in optical spectra is demonstrated. An analysis of reflectance spectra has yielded the exciton parameters: the resonant frequency, oscillator strength, and exciton line damping. The exciton binding energies have been determined from magneto-optical spectra. The samples studied have a high structural perfection and small inhomogeneous width of the excitonic resonances.