Molecular beam epitaxy of p‐type ZnSTe:N and p–n‐junction light emitting diodes
Molecular beam epitaxy of p‐type ZnSTe:N and p–n‐junction light emitting diodes
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p 型 ZnSTe:N 和 p-n 结发光二极管的分子束外延
DOI：
10.1002/pssc.201300626
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Kashiyama
中科院分区：
文献类型：
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作者：
K. Ichino;T. Kojima;S. Obata;Takuma Kuroyanagi;Kenta Kimata;Shoichi Nakazawa;S. Kashiyama
人们研究了带有 N 受体的 ZnS1-xTex 合金的 p 型掺杂，认为由于 Te 的掺入而导致价带最大值向上移动可以提高 p 型掺杂效率。发现 0.2 < x < 0.3 的层的电阻率小于 100 Ωcm，从电流电压 (I – V) 特性和电子束感应电流表明这些层为 p 型。为了进一步表征，我们制造了 ZnSTe:N/n-ZnS 二极管结构。结果发现，二极管的 I-V 特性表现出明显的整流，并且蓝绿色电致发光可能是由于空穴从 ZnSTe:N 层注入 n-ZnS 层所致。这些结果表明 ZnSTe:N 中存在 p 型传导，因此表明 ZnS 基 pn 结中的发光二极管工作。 （© 2014 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
p-type doping of ZnS1–xTex alloy with N acceptors has been studied with an idea that an upward shift of the valence band maximum due to Te incorporation could improve p-type doping efficiency. The resistivity was found to be less than 100 Ωcm for the layers with 0.2 < x < 0.3, which are suggested to be p-type from the currentvoltage (I – V) characteristic and the electron-beam induced current. For further characterization, ZnSTe:N/n-ZnS diode structures have been fabricated. It was found that the diode exhibits clear rectification in I – V characteristic, and blue-green electroluminescence probably due to hole injection from the ZnSTe:N layer into the n-ZnS layer. These results indicate p-type conduction in ZnSTe:N, and thus the light-emitting diode operation in the ZnS-based pn-junctions. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)