Optically induced charging effects in self-assembled GaSb/ GaAs quantum dots
Optically induced charging effects in self-assembled GaSb/ GaAs quantum dots
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自组装GaSb/GaAs量子点中的光致充电效应
DOI：
10.1103/physrevb.70.081302
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发表时间：
2004
影响因子：
3.7
通讯作者：
V. Moshchalkov
中科院分区：
文献类型：
--
作者：
M. Hayne;O. Razinkova;S. Bersier;R. Heitz;L. Müller;M. Geller;D. Bimberg;V. Moshchalkov
我们报道了自组装GaSb/GaAs量子点的光致发光（PL）测量。随着激光激发从非常低的水平增加，PL显示出强烈的红移，然后蓝移，使得它呈现出U形曲线。升高温度导致PL的大的蓝移（<100 meV），并且将PL能量与激光激发曲线的最小值移动到更高的激光功率。在激光功率远小于1 W cm（-2）的磁场中，PL能量发生红移。我们解释这些影响人口或人口减少的点，在黑暗中充满了由碳受体提供的空穴。
We report photoluminescence (PL) measurements on self-assembled GaSb/GaAs quantum dots. As the laser excitation is increased from very low levels, the PL shows a strong red shift, and then a blue shift, such that it presents a U-shaped curve. Raising the temperature causes a large (<100 meV) blue shift of the PL, and shifts the minimum of the PL energy versus laser excitation curve to higher laser powers. Applying a magnetic field at lasers powers much less than1 W cm(-2) red shifts the PL energy. We explain these effects by population or depopulation of dots that are filled in the dark with holes supplied by carbon acceptors.