Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition
Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition
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DOI：
10.1016/j.apsusc.2010.11.043
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发表时间：
2011-02-01
影响因子：
6.7
通讯作者：
Lin, Yung-Hsin
中科院分区：
文献类型：
--
作者：
Chen, Yu-Yun;Hsu, Jin-Cherng;Lin, Yung-Hsin
研究了室温下离子束共溅射制备的掺铝氧化锌（AZO）薄膜的电阻率与结构/成分的关系。AZO薄膜的各种成分由Al和Zn靶的溅射面积比控制。用X射线衍射仪（XRD）、能谱仪（EDS）和四探针台分别对薄膜的结构、Al含量和结晶度进行了表征。沉积膜的最低电阻率在0.7重量%时为5.66 × 10（-4）Ω-cm。铝浓度薄膜中ZnO（0 0 2）衍射峰最强，晶粒尺寸最大，平均自由程最长，自由载流子浓度最高，室温电阻率最低，为5.6 6 × 10（-4）Ω cm，同时研究了AZO薄膜电阻率随温度变化的热稳定性。在200 ℃以下，膜的电阻率几乎保持在固定值，并且观察到在247 ℃下的4.64 × 10（-4）Ω-cm的最低电阻率。(C)2010年爱思唯尔B。V.保留所有权利。
The correlation between the resistivity and the structure/composition in the aluminum doped zinc oxide (AZO) films fabricated by the ion beam co-sputtering deposition at room temperature was investigated. The various compositions of AZO films were controlled by the sputtered area ratio of Al to Zn target. The structure, Al concentrations and resistivities of the as-deposited films were determined by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS) and four-point probe station, respectively. The lowest resistivity of the deposited film was 5.66 x 10(-4) Omega-cm at the 0.7 wt.% aluminum concentration. The most intense ZnO (0 0 2) diffraction peak, the largest grain size, the longest mean free path, and the highest free carrier concentration in the film result in the lowest resistivity of 5.66 x 10(-4) Omega-cm at room temperature; simultaneously, the thermal stability of the resistivity of the AZO film as a function of the sample temperature was investigated. Below 200 degrees C the film's resistivity was almost kept at a fixed value and the lowest resistivity of 4.64 x 10(-4) Omega-cm at 247 degrees C was observed. (C) 2010 Elsevier B. V. All rights reserved.