Design of Linearly Substituted Fullerene Bis-Adducts with High Dielectric Constants Based on Theoretical Calculations
Design of Linearly Substituted Fullerene Bis-Adducts with High Dielectric Constants Based on Theoretical Calculations
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DOI：
10.1246/bcsj.20210132
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发表时间：
2021-06
影响因子：
4
通讯作者：
F. Matsumoto;S. Sumino;T. Iwai;Takatoshi Ito
中科院分区：
文献类型：
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作者：
F. Matsumoto;S. Sumino;T. Iwai;Takatoshi Ito
与无机材料相比，有机半导体的介电常数较低，这是其固有的局限性。提高介电常数对…的发展具有重要意义。
The low dielectric constants of organic semiconductors, relative to those of inorganic materials, are an intrinsic limitation. Improving the dielectric constant is important for the development of ...