Graphene Quantum Dots Doping of MoS2 Monolayers
Graphene Quantum Dots Doping of MoS2 Monolayers
复制标题
MoS2单层石墨烯量子点掺杂
DOI：
10.1002/adma.201501888
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发表时间：
2015-09-16
影响因子：
29.4
通讯作者：
Fang, Zheyu
中科院分区：
文献类型：
--
作者：
Li, Ziwei;Ye, Ruquan;Fang, Zheyu
石墨烯量子点（GQDs）与二硫化钼（MoS2）单层相互作用在界面处诱导了有效的光激发电荷转移。在不同的掺杂电荷密度下，GQDs/MoS2异质结构的光致发光（PL）和谷极化都可以被调制。利用光子-激子相互作用来解释和计算异质结构PL控制，并进一步应用于谷偏振调谐。
Graphene quantum dots (GQDs) interacting with molybdenum disulfide (MoS2 ) monolayers induce an effective photoexcited charge transfer at the interface. Both the photoluminescence (PL) and valley polarization of this GQDs/MoS2 heterostructure can be modulated under various doping charge densities. The photon-exciton interaction is used to explain and calculate the heterostructure PL control, and is further applied to the valley-polarization tuning.