Low temperature germanium to silicon direct wafer bonding using free radical exposure
Low temperature germanium to silicon direct wafer bonding using free radical exposure
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DOI：
10.1063/1.3360201
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发表时间：
2010-03
影响因子：
4
通讯作者：
K. Byun;I. Ferain;Peter G. Fleming;M. Morris;M. Goorsky;C. Colinge
中科院分区：
文献类型：
--
作者：
K. Byun;I. Ferain;Peter G. Fleming;M. Morris;M. Goorsky;C. Colinge
采用真空原位自由基活化键合的方法，研究了锗与硅的低温键合方法。为了进一步了解成键机理，利用角分辨x射线光电子能谱分析了氧自由基和氮自由基活化后的Ge表面化学性质。在低温下将Ge与Si直接结合，然后在200°C和300°C下退火，利用先进的成像技术对结合界面进行表征。
A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 °C, advanced imaging techniques were used to characterize the bonded interface.