2D or not 2D-Layered Functional (C, N) Materials "Beyond Silicon and Graphene"
2D or not 2D-Layered Functional (C, N) Materials "Beyond Silicon and Graphene"
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DOI：
10.1002/macp.201500312
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发表时间：
2016-01-01
影响因子：
2.5
通讯作者：
Bojdys, Michael J.
中科院分区：
文献类型：
--
作者：
Bojdys, Michael J.
半导体硅的薄层在所有电子器件中无处不在。预计单个晶体管在尺寸、性能和成本方面的持续指数级改进将在近期面临严峻的挑战。随着“后硅电子学”时代的到来，研究人员正在竞相解决材料安全、低能耗制造和器件性能设计等问题。碳和氮（C，N）的化学性质为新型2D材料的模块化设计提供了一条有吸引力的途径，“超越了硅和石墨烯。"
Thin layers of the semiconductor silicon are omnipresent in all electronic devices. Ongoing, exponential improvement in size, performance, and cost of a single transistor is predicted to face serious challenges in the near feature. With the era of "postsilicon electronics" on the horizon, researchers are racing to address issues of material security, less energy-intensive manufacturing, and design of device properties. The chemistry of carbon and nitrogen (C, N) provides an attractive avenue toward the modular design of new 2D materials "beyond silicon and graphene."