Void formation in amorphous germanium due to high electronic energy deposition
Void formation in amorphous germanium due to high electronic energy deposition
复制标题
由于高电子能量沉积而在非晶锗中形成空隙
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
W. Wesch
中科院分区：
文献类型：
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作者：
K. Gärtner;J. Johrens;T. Steinbach;C. Schnohr;M. Ridgway;W. Wesch
用能量高达185 MeV的离子束和不同入射角辐照Au，并通过分子动力学计算机模拟，对非晶锗中的高电子能量沉积效应进行了实验研究。在这两种情况下，能量沉积导致空隙形成，伴随着非晶锗的强烈溶胀。模拟结果表明，空洞的形成主要是基于冲击波机制，空洞的膨胀是由空洞的形成和长大以及空洞的收缩和湮灭这两个相互竞争的过程决定的。在实验和模拟之间完全一致，膨胀的量是一个线性函数的总能量沉积到电子过程中，存在一个阈值的电子能量损失每离子和膨胀的深度。通过实验和模拟获得的阈值的比较表明，大约20%的能量沉积到电子过程中转换成原子运动。
The effect of high electronic energy deposition in amorphous germanium has been studied experimentally by Au irradiation with ion energies of up to 185 MeV and different angles of incidence and by molecular dynamics computer simulations. In both cases, the energy deposition leads to void formation accompanied by strong swelling of the amorphous germanium. The simulation results prove that the formation of the voids is mainly based on a shock wave mechanism and the swelling is determined by the competing processes of the formation and growth of voids on the one hand and the shrinking and annihilation of voids on the other hand. In full agreement between experiment and simulation, the amount of the swelling is a linear function of the total energy deposited into electronic processes and there exists a threshold value of the electronic energy loss per ion and depth for swelling. A comparison of the threshold values obtained by the experiment and the simulation suggests that approximately 20% of the energy deposited into electronic processes is converted into atomic motion.