Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells
Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells
复制标题
InGaAs/AlGaAs 多量子阱中铟偏析及其通过 GaAs 插入层抑制的原子尺度见解
DOI：
10.1088/1674-1056/ac70b5
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发表时间：
2023-03-01
影响因子：
1.7
通讯作者：
Hao, Xiao-Dong
中科院分区：
文献类型：
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作者：
Ma, Shu-Fang;Li, Lei;Hao, Xiao-Dong
利用高分辨X射线衍射(XRD)和光致发光(PL)技术，结合最新的像差校正扫描电子显微镜(Cs-STEM)技术，研究了InGaAs/AlGaAs量子阱中In的偏析及其抑制。为了方便我们的研究，我们生长了两个多量子阱(MQW)样品，它们几乎是相同的，除了在样品B中，与原始的InGaAs/AlGaAsMQW(样品A)相比，在InGaAs势垒和AlGaAs势垒层中各插入了一层薄的GaAs层。我们的研究确实给出了In在InGaAs/AlGaAs界面发生分凝的直接证据，并在原子尺度上证明了GaAs插入层对In原子分凝的抑制作用。因此，提供了原子尺度的见解，以了解In原子的偏析行为，并揭示了GaAs插入层对改善结晶度和界面粗糙度，进而提高InGaAs/AlGaAsQW光学性能的潜在机制。
The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction (XRD) and photoluminescence (PL), combined with the state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-STEM) techniques. To facility our study, we grow two multiple quantum wells (MQWs) samples, which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs (sample A). Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface, and the effect of the GaAs insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale. Therefore, the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity, interface roughness, and further an enhanced optical performance of InGaAs/AlGaAs QWs.