Leakage delays in BAM
Leakage delays in BAM
复制标题
DOI：
10.1016/j.jmaa.2006.02.039
复制
发表时间：
2007-01-15
影响因子：
1.3
通讯作者：
Gopalsamy, K.
中科院分区：
文献类型：
--
作者：
Gopalsamy, K.
通过在泄漏（或遗忘）项中引入离散时间延迟，推广了众所周知的双向联想记忆（BAM）模型。通过模型变换，将系统转化为中立型时滞系统。导出了唯一平衡点存在的两组与时滞相关的充分条件，并给出了平衡点的渐近稳定性和指数稳定性。利用退化Lyapunov-Kravsovskii泛函和不等式的方法，结合m矩阵的一些性质，给出了充分条件的推导。在没有泄漏延迟的情况下，充分条件导致一些已知的充分条件。(c) 2006爱思唯尔公司版权所有。
A well known bidirectional associative memory (BAM) model is generalized with the introduction of discrete time delays in the leakage (or forgetting) terms. By using a model transformation, the system is converted to one of a neutral delay system. Two sets of delay dependent sufficient conditions are derived for the existence of a unique equilibrium as well as its asymptotic and exponential stability. The methods of degenerate Lyapunov-Kravsovskii functionals and inequalities together with some properties of M-matrices are used in the derivation of sufficient conditions. In the absence of leakage delays, the sufficient conditions lead to some known sufficient conditions. (c) 2006 Elsevier Inc. All rights reserved.