The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature
The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature
复制标题
DOI：
10.1063/1.3075855
复制
发表时间：
2009-01-26
影响因子：
4
通讯作者：
Borri, Paola
中科院分区：
文献类型：
--
作者：
Cesari, Valentina;Langbein, Wolfgang;Borri, Paola
我们测量了未掺杂和相同工艺的p掺杂InAs/GaAs量子点放大器在20K时基态跃迁的增益动力学。掺杂器件中的动力学由一个很短(类似于0.1ps)和一个很长(类似于300ps)的时间常数主导。这分别归因于空穴动力学和电子动力学，并由微态模型定量描述。通过比较两种器件中相同模式增益的动力学特性，发现由于超快的空穴-空穴散射，p掺杂样品的增益恢复较快，但随后由于缺少电子储存库，恢复较慢。
We measured the gain dynamics of the ground-state transition at 20 K in an undoped and identically fabricated p-doped InAs/GaAs quantum-dot amplifier. The dynamics in the doped device is dominated by a very short (similar to 0.1 ps) and a very long (similar to 300 ps) time constant. These were attributed to hole and electron dynamics, respectively, and quantitatively described by a microstate model. By comparing the dynamics for the same modal gain in the two devices, the gain recovery was initially faster in the p-doped sample, attributed to ultrafast hole-hole scattering, but slower at later times due to the lack of an electron reservoir.