Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixtures
Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixtures
复制标题
在未稀释和氢气稀释的 SiH4 CH4 气体混合物中通过 PECVD 生长的 a-SiC:H 薄膜的光浸泡
DOI：
10.1016/0022-3093(95)00754-7
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发表时间：
1996
影响因子：
3.5
通讯作者：
P. Rava
中科院分区：
文献类型：
--
作者：
M. Fathallah;R. Gharbi;G. Crovini;F. Demichelis;F. Giorgis;C. Pirri;E. Tresso;P. Rava
通过等离子体增强化学气相沉积（PECVD）从未稀释和氢稀释的SiH 4 + CH 4混合物沉积具有在2.0- 2.5eV范围内的能隙的非晶硅碳合金。测量了样品的光电性质和组成性质。对样品进行光浸泡直至饱和，并研究稀释和未稀释样品组对缺陷密度和光电导的影响。在氢气中稀释的气体混合物产生的样品具有较高的碳掺入，较低的缺陷密度和较低的光浸泡下的光电性能的退化。
Amorphous silicon carbon alloys having an energy gap in the range 2.0–2.5 eV were deposited by plasma enhanced chemical vapor deposition (PECVD) from undiluted and hydrogen diluted SiH4+ CH4mixtures. The optoelectronic and compositional properties of the samples were measured. Light soaking till saturation was performed on the samples and the effect on defect densities and photoconduction was investigated for both the diluted and undiluted sets of samples. The dilution in hydrogen of the gas mixtures produces samples with higher carbon incorporation, lower defect density and a lower degradation of the optoelectronic properties under light soaking.