Double quantum dot as detector of spin bias
Double quantum dot as detector of spin bias
复制标题
双量子点作为自旋偏压探测器
DOI：
10.1103/physrevb.77.195313
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发表时间：
2008-05
影响因子：
3.7
通讯作者：
Shen, Shun-Qing
中科院分区：
文献类型：
--
作者：
Xing, Yanxia;Sun, Qing-feng;Shen, Shun-Qing
有人提出，双量子点可以作为自旋偏置的探测器。研究了在与双量子点接触的两个导电引线上施加纯自旋偏压时，电子通过双量子点的输运。结果表明，左右量子点的自旋极化是自发产生的，而点内能级位于自旋偏置窗口内，破坏了两个量子点的左右对称性.结果，产生了一股巨大的电流。对于开放的外部电路，在平衡时将感应电荷偏置而不是充电电流，这被认为是根据当前纳米技术可测量的。该方法为通过测量双量子点中的电荷偏置或电流来检测自旋偏置（或自旋电流）提供了一种实用的全电学方法。
It was proposed that a double quantum dot can be used as a detector of the spin bias. Electron transport through a double quantum dot is theoretically investigated when a pure spin bias is applied on two conducting leads in contact with the quantum dot. It is found that the spin polarization in the left and right dots may be spontaneously induced, while the intradot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit, a charge bias instead of a charge current will be induced at equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.