Effect of Annealing with Ar Plasma Irradiation for Transparent Conductive Nb-Doped TiO2 Films on Glass Substrate
Effect of Annealing with Ar Plasma Irradiation for Transparent Conductive Nb-Doped TiO2 Films on Glass Substrate
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DOI：
10.1143/jjap.48.08hk06
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发表时间：
2009-08
影响因子：
1.5
通讯作者：
Mika Hojo;K. Okimura
中科院分区：
文献类型：
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作者：
Mika Hojo;K. Okimura
通过对沉积的非晶膜进行后退火而在玻璃基板上形成的掺杂Nb的TiO 2导电膜（TiO 2：Nb）有望成为下一代透明导电氧化物（TCO）的替代材料。我们研究了退火与Ar等离子体辐照的影响，已在玻璃衬底上生长的反应溅射TiO 2：Nb薄膜。结果表明，在等离子体密度高达6× 10 ~（11）cm ~（-3）的Ar等离子体中，在300 °C下退火，电阻率在几分钟内迅速下降到10 ~（-3）Ω cm量级。等离子体辐照引起的氧缺陷被认为是负责电阻率的快速下降，而不是通过结晶激活的Nb原子。采用高密度等离子体退火20 min后的薄膜在可见光区的光学透过率约为80%，最小电阻率为1.5×10-3 Ω cm，表明了所提出的制备TiO 2：Nb薄膜作为TCO的方法的优点。
Conductive Nb-doped TiO2 films (TiO2:Nb) on glass substrates formed via post annealing of as-deposited amorphous films are expected to be an alternative next-generation transparent conductive oxide (TCO). We investigated the effects of annealing with Ar plasma irradiation on TiO2:Nb films that had been grown on glass substrates by reactive sputtering. It was revealed that annealing at 300 °C with Ar plasma, in which the plasma density was as high as 6×1011 cm-3, induced a rapid decrease in resistivity to the order of 10-3 Ω cm within several minutes. Plasma-irradiation-induced oxygen defects were suggested to be responsible for the rapid decrease in resistivity rather than the activation of incorporated Nb atoms through crystallization. The film annealed with the high-density plasma for 20 min showed optical transmittance of approximately 80% for the visible wavelength region with a minimum resistivity of 1.5×10-3 Ω cm, demonstraiting the advantages of the proposed method for fabricating TiO2:Nb films as TCOs.