Texture development in Ti-Si-N nanocomposite thin films
Texture development in Ti-Si-N nanocomposite thin films
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DOI：
10.1016/j.msea.2005.09.132
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发表时间：
2006-05
期刊：
影响因子：
6.4
通讯作者：
R. Chandra;D. Kaur;A. Chawla;N. Phinichka;Z. Barber
中科院分区：
文献类型：
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作者：
R. Chandra;D. Kaur;A. Chawla;N. Phinichka;Z. Barber
采用溅射法在R面蓝宝石衬底上制备了氮化钛硅纳米复合薄膜。通过在-20 ~-200V范围内改变偏压，系统地研究了硅的添加和负衬底偏压对薄膜织构发展的影响。利用X射线衍射和原子力显微镜详细研究了这些薄膜中相的微观结构和生长形态的相应变化。此外，还利用纳米压痕技术研究了织构对薄膜力学性能的影响。纯TiN薄膜在不含Si的条件下具有较强的（111）择优取向，而添加Si后，薄膜的择优取向由（111）变为（200）。同时，这些薄膜的表面形貌从一个明显的柱状微结构转变为一个致密的，细晶粒的结构。沉积过程中施加的负衬底偏压的影响也导致了类似的薄膜取向和微观结构的变化，并导致薄膜的硬度从21增加到40 GPa，分别。
Nanocomposite thin films of titanium silicon nitride were deposited by sputtering on R-plane sapphire substrates. The effects of silicon addition and negative substrate bias on the texture development of the films were studied systematically by varying the bias voltage in the range −20 to −200V. The accompanying changes in the microstructure and growth morphology of the phases in these films were investigated in detail using X-ray diffraction and a atomic force microscopy. In addition, the effect of texture on the mechanical properties of the films was also investigated using nanoindentation technique. Pure TiN films deposited without Si exhibit a strong (111) preferred orientation, while with addition of Si, the orientation of the films changes from (111) to (200). Meanwhile the surface morphology of these films changed from a pronounced columnar microstructure to a dense, fine-grained structure. The effect of negative substrate bias voltage applied during deposition also resulted in a similar change of film orientation and microstructure and leads to the increase in hardness of the films from 21 to 40GPa, respectively.