Ion beam synthesis of germanium nanostructures
Ion beam synthesis of germanium nanostructures
复制标题
锗纳米结构的离子束合成
DOI：
10.1016/j.surfcoat.2009.02.040
复制
发表时间：
2009
影响因子：
5.4
通讯作者：
D. Kothari
中科院分区：
文献类型：
--
作者：
K. Joshi;A. Narsale;D. Kanjilal;Trupti N. Warang;T. K. Gundurao;D. Kothari
硅和锗纳米晶体镶嵌在二氧化硅中，在集成光电器件中具有广泛的应用前景。离子束混合锗膜到熔融二氧化硅中形成锗纳米粒子是可控地产生嵌入纳米团簇的可能方法之一。在熔融二氧化硅中，通过缺陷诱导成核和离子束混合形成锗纳米晶体。在我们的实验中，我们使用200 keV的不同影响的Ar离子在熔融二氧化硅中产生缺陷，影响范围从1× 10 15到2× 10 16离子/ cm2（预混合辐照）。然后在其上沉积Ge膜（20nm），并以2x1016个离子/ cm2的剂量用230kev的Ar离子混合离子束。利用紫外可见光谱和微拉曼光谱对复合膜进行了表征。紫外可见光谱显示吸收带隙随预混合辐照离子束辐照量的变化而变化。微拉曼光谱显示在sio2中形成了Ge纳米颗粒。
Si and Ge nanocrystals embedded in SiO 2 have attracted much attention due to their possible application in integrated optoelectronic devices. Ion beam mixing of Ge film into fused silica to form Ge nanoparticles is one of the possible methods to controllably produce embedded nanoclusters. In this work, Ge nanocrystals in fused silica were formed by defect induced nucleation and ion beam mixing. In our experiment, we have created defects in fused silica using 200 keV Ar ions with different fluences ranging from 1× 10 15 to 2× 10 16 ions/cm 2 (pre-mixing irradiation). Ge film (20 nm) was then deposited on it and ion beam mixed using 230 keV Ar ions at a fluence of 2× 10 16 ions/cm 2. The Ge–SiO 2 composite films were characterized using UV–visible and Micro-Raman spectroscopy. UV–visible spectra showed variation in absorption band gap with ion beam fluence used for pre-mixing irradiation. Micro-Raman spectra showed formation of Ge nanoparticles in SiO 2.