InGaN/GaN Laser Diodes and their Applications
InGaN/GaN Laser Diodes and their Applications
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DOI：
10.1109/icton.2018.8473864
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发表时间：
2018-07
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通讯作者：
S. Watson;S. Gwyn;S. Viola;Giovanni Giuliano;T. Slight;S. Stanczyk;S. Grzanka;A. Yadav;D. Rowe;L. Laycock;K. Docherty;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;A. Kelly
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作者：
S. Watson;S. Gwyn;S. Viola;Giovanni Giuliano;T. Slight;S. Stanczyk;S. Grzanka;A. Yadav;D. Rowe;L. Laycock;K. Docherty;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;A. Kelly
氮化镓（GaN）激光二极管不仅在照明领域，而且在从通信到量子的应用领域都越来越受欢迎。本文介绍了使用商业，现成的激光二极管，发射波长为450 nm，可见光通信，无论是在自由空间和水下的情况。通过使用正交频分复用（OFDM）已经实现了高达15 Gbit/s的数据速率。此外，分布反馈（DFB）激光器已经实现了在单一波长下发射，这有助于高光谱纯度至关重要的应用，如原子钟或滤波自由空间传输系统。这些器件具有蚀刻到脊的侧壁中的光栅结构，并且正在进行工作以测量这些激光器的线宽，其具有冷却Sr+离子的预期应用。
Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.