Preparation of an ultra-clean and atomically controlled hydrogen-terminated Si(111)-(1x1) surface revealed by HREELS, AFM and STM : aqueous NH4F etching process of Si(111)

Preparation of an ultra-clean and atomically controlled hydrogen-terminated Si(111)-(1x1) surface revealed by HREELS, AFM and STM : aqueous NH4F etching process of Si(111)
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HREELS、AFM 和 STM 揭示超洁净原子控制氢封端 Si(111)-(1x1) 表面的制备:Si(111) 的水基 NH4F 蚀刻工艺

DOI:
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发表时间:
2007
期刊:
Jpn.J.Appl.Phys. (In press)
影响因子:
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通讯作者:
A.Kasuya et al.
A.Kasuya et al.
中科院分区:
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文献类型:
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作者:
Yasunobu;Maeda;Norio;Kurita;A.Kasuya et al.

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