Ferroelectric properties of epitaxial Bi2SiO5 thin films grown on SrTiO3 substrates with various orientations
Ferroelectric properties of epitaxial Bi2SiO5 thin films grown on SrTiO3 substrates with various orientations
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DOI：
10.7567/1347-4065/ab36cf
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发表时间：
2019-11-01
影响因子：
1.5
通讯作者：
Funakubo, Hiroshi
中科院分区：
文献类型：
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作者：
Kodera, Masanori;Shimizu, Takao;Funakubo, Hiroshi
研究了外延生长的Bi2SiO5薄膜的铁电性能。采用脉冲激光沉积方法在不同取向的SrTiO3衬底上沉积了Bi2SiO5薄膜。分别在(100)-、(110)-和(111)-取向的SrTiO3衬底上成功生长了（100）、（411）和(210)/(201)等不同取向的薄膜。此外，沉积在（111）SrTiO3衬底上的Bi2SiO5薄膜具有高度（201）取向，表明由于更好的晶格匹配，c相关facet有选择性生长。虽然Bi2SiO5薄膜在其结构中不含钙钛矿块，但在具有钙钛矿块的铋层状铁电体的情况下，Bi2SiO5薄膜的取向能够以类似的方式控制。A（411）取向Bi2SiO5薄膜表现出明显的铁电特性，饱和极化约为7.8 μ C cm（-2）。我们的研究结果表明，具有层状结构的无钙钛矿块的外延Bi2SiO5薄膜是铁电器件的有希望的候选者。(C) 2019日本应用物理学会
Ferroelectric properties of epitaxially grown Bi2SiO5 films were investigated. Bi2SiO5 films were deposited by pulsed laser deposition on SrTiO3 substrates with different orientations. Films with various orientations such as (100), (411), and (210)/(201) were successfully grown on SrTiO3 substrates with (100)-, (110)-, and (111)- orientations, respectively. Furthermore, Bi2SiO5 films deposited on (111)SrTiO3 substrates were highly (201)-oriented, indicating the selective growth of c-related facet due to the better lattice matching. Although Bi2SiO5 films do not contain perovskite blocks in its structure, film orientations of Bi2SiO5 were able to be controlled in a similar manner in the case of bismuth layered structure ferroelectrics with perovskite blocks. A (411)-oriented Bi2SiO5 film exhibited a clear ferroelectric feature and showed a saturation polarization of about 7.8 mu C cm(-2). Our findings show that epitaxial Bi2SiO5 thin films with a layered structure without perovskite blocks are a promising candidate for ferroelectric devices. (C) 2019 The Japan Society of Applied Physics