Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
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黑磷场效应晶体管中的应变调制带隙和压阻效应
DOI：
10.1021/acs.nanolett.7b02624
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发表时间：
2017
期刊：
影响因子：
10.8
通讯作者：
Zhang Yuanbo
中科院分区：
文献类型：
--
作者：
Zhang Zuocheng;Li Likai;Horng Jason;Wang Nai Zhou;Yang Fangyuan;Yu Yijun;Zhang Yu;Chen Guorui;Watanabe Kenji;Taniguchi Takashi;Chen Xian Hui;Wang Feng;Zhang Yuanbo
能带隙在很大程度上决定了半导体的光学和电学性质。因此，可变带隙使得在单一材料中实现多功能成为可能。在层状材料黑磷中，带隙可以通过层数进行调制；因此，少数层黑磷具有离散的带隙值，这些值与从红色、单层到体积极限的中红外光谱范围内的光电应用有关。在这里，我们进一步演示了通过柔性衬底施加机械应变进行连续带隙调制。应变调制带隙显著改变了热激活载流子的密度；我们首次在室温下观察到了黑磷场效应晶体管(FET)中的大压阻效应。这一效应为基于黑磷的机电换能器的未来发展开辟了机会，并展示了一种由黑磷薄晶构成的超灵敏应变计。
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.