Novel Ultralow Loss SOI LIGBT With a Self-Adaptive pMOS and Double Floating Ohmic Contacts
Novel Ultralow Loss SOI LIGBT With a Self-Adaptive pMOS and Double Floating Ohmic Contacts
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DOI：
10.1109/ted.2023.3303288
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发表时间：
2023-10
影响因子：
3.1
通讯作者：
X. Luo;Junnan Wang;Kemeng Yang;Jie Wei;Kaiwei Dai;Pengcheng Zhu
中科院分区：
文献类型：
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作者：
X. Luo;Junnan Wang;Kemeng Yang;Jie Wei;Kaiwei Dai;Pengcheng Zhu
提出了一种具有改善反向恢复特性的超低损耗横向绝缘栅双极晶体管(LIGBT)，并对其进行了模拟研究。提出的LIGBT具有自适应PMOS和双浮动欧姆触点(FOC)(F1和F2)(命名为SPF LIGBT)。F1不仅通过提供栅极电势来控制PMOS，而且还充当复合金属电极。在关断期间，在电压上升期间，尽管PMOS处于关断状态，但F1将来自P+阳极的空穴与N漂移区中的电子进行重组，然后在电流下降期间，PMOS自适应地导通，从而提供空穴电流路径以加速来自N漂移区的电子电流经由F2的重组。此外，开启的PMOS还钳位P+阳极/N-缓冲结的压降，以抑制阳极空穴注入。因此，SPF LIGBT实现了超快的开关速度和低的关断损耗(${E}_{\Text{Off}}$)。它不仅可以实现反向导通，而且由于PMOS中的寄生p-n-p晶体管通过F2传导空穴电流与来自N漂移区的电子重新结合，因此具有较低的反向恢复电荷(${q}{\Text{rr}$)。由于PMOS导通，SPF LIGBT获得了类似MOS的击穿模式。与SSA和STA LIGBT相比，所提出的LIGBT在相同的导通压降(${V}_{\Text{On}}$)下分别降低了${E}_{\Text{Off}}$和55%。与STA型LIGBT相比，该器件的性能降低了48%。简而言之，SPF IGBT具有最先进的综合性能，包括更好的${V}_{\Text{On}}$-${E}_{\Text{Off}}$权衡，更高的BV和品质因数(FOM)，更低的${Q}_{\Text{rr}}$，以及反向导通能力。
An ultralow loss lateral insulated gate bipolar transistor (LIGBT) with improved reverse recovery characteristic is proposed and investigated by simulations. The proposed LIGBT features a self-adaptive pMOS and double floating ohmic contacts (FOC) (F1 and F2) (named as SPF LIGBT). The F1 not only controls the pMOS by providing the gate potential, but also acts as a recombination metal electrode. During turning off, in the voltage rising period, the F1 recombines the holes from the P+ anode with electrons in the N-drift region although the pMOS is in the off-state, and then in the current decreasing period, the pMOS self-adaptively turns on, and hence provides a hole current path to accelerate the recombination of electron current from N-drift region via F2. Furthermore, the turned-on pMOS also clamps the voltage drop of P+ anode/N-buffer junction to suppress the anode hole injection. Therefore, the SPF LIGBT achieves an ultrafast switching speed and low turn-off loss ( ${E} _{\text{OFF}}$ ). It also can not only realize reverse conduction, but also has lower reverse recovery charge ( ${Q} _{\text {rr}}$ ) because the parasitic p-n-p transistor in the pMOS conducts hole current to recombine with the electrons from N-drift region through F2. Owing to the turned-on pMOS, SPF LIGBT obtains a MOS-like breakdown mode. Compared with the SSA and STA LIGBTs, the proposed LIGBT decreases the ${E} _{\text{OFF}}$ by 79% and 55% at the same ON-state voltage drop ( ${V} _{\text{ON}}$ ). The proposed device achieves 48% lower ${Q} _{\text {rr}}$ than STA LIGBT. In short, the SPF IGBT has state-of-the-art comprehensive performance, including better ${V} _{\text{ON}}$ – ${E} _{\text{OFF}}$ tradeoff, higher BV and figure of merit (FOM), lower ${Q} _{\text {rr}}$ , together with reverse conduction ability.