Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors
Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors
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DOI：
10.1063/1.2173226
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发表时间：
2006-02
影响因子：
4
通讯作者：
Y. Takahashi;T. Hasegawa;Y. Abe;Y. Tokura;G. Saito
中科院分区：
文献类型：
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作者：
Y. Takahashi;T. Hasegawa;Y. Abe;Y. Tokura;G. Saito
在基于四硫富瓦烯-四氰基胍二甲烷的有机金属电极中使用费米能的化学可调性质，在原型单晶有机FET中成功地证明了p型、n型和双极型场效应晶体管（FET）操作的精细控制。载流子类型的偏好和整流性质的有机-有机接触的FET操作，以及所有有机肖特基二极管的特性。
Fine control of p-, n-, and ambipolar-type field-effect transistor (FET) operations is successfully demonstrated in prototypical single-crystal organic FETs with use of chemically tunable nature of Fermi energy in tetrathiafulvalene-tetracyanoguinodimethane-based organic metal electrodes. Carrier-type preference and rectifying nature in the organic-organic contacts are revealed in terms of the FET operations as well as of the all-organic Schottky diode characteristics.