Cryogenic dry etching for high aspect ratio microstructures
Cryogenic dry etching for high aspect ratio microstructures
复制标题
高深宽比微结构的低温干法蚀刻
DOI：
10.1109/memsys.1993.296953
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
M. Esashi
中科院分区：
文献类型：
--
作者：
K. Murakami;Y. Wakabayashi;K. Minami;M. Esashi
低温反应离子刻蚀（RIE）已被用于制造微结构。低温系统具有温度控制在0至-140 ℃的阴极级。引入磁场和电极之间的窄间隙以增加等离子体密度。研究了硅和聚酰亚胺薄膜的刻蚀行为。在低温下实现了定向刻蚀。通过使用Sm-Co永磁体以及在恒定压力下的蚀刻气体的高流速来增加蚀刻速率。在硅晶片蚀刻的情况下，在阴极温度为-120 ℃时，以小于0.02的归一化侧蚀刻获得了1.6 μ m/min的最大蚀刻速率。在小于4.0W/cm/sup 2/的功率密度下，刻蚀选择性大于900。在聚酰亚胺膜蚀刻的情况下，在-100 ℃下以0.8 μ m/min的蚀刻速率实现小于0.01的归一化侧蚀刻。低温RIE系统可用于制造具有高深宽比的3-D硅和聚酰亚胺结构。<<ETX>>
Cryogenic reactive ion etching (RIE) has been used to fabricate microstructures. The cryogenic system has a cathode stage that is temperature controlled from 0 to -140 degrees C. A magnetic field and a narrow gap between electrodes are introduced to increase plasma density. The etching behavior of silicon and polyimide film has been investigated. Directional etching was achieved at low temperature. The etch rate was increased by using Sm-Co permanent magnets and also a high flow rate of the etching gas under constant pressure. In the case of silicon wafer etching, a maximum etch rate of 1.6 mu m/min was achieved with normalized side etch of less than 0.02 at cathode temperature of -120 degrees C. Etching selectivity was over 900 at a power density of less than 4.0 W/cm/sup 2/. In the case of the polyimide film etching, normalized side etch of less than 0.01 with an etch rate of 0.8 mu m/min was achieved at -100 degrees C. The cryogenic RIE system can be used to fabricate 3-D silicon and polyimide structures with high aspect ratio.<<ETX>>