Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
复制标题
使用超薄氮化氧化物薄膜作为缓冲层的金属/铁电/绝缘体/半导体结构的特性
DOI：
10.1143/jjap.38.l451
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
Y. Tarui
中科院分区：
文献类型：
--
作者：
K. Sakamaki;Tadahiko Hirai;T. Uesugi;H. Kishi;Y. Tarui
在锡永/p-Si（100）衬底上，在700°C的工艺温度下制备了SrBi 2 Ta 2 O 9（SBT）薄膜。在X射线光电子能谱（XPS）分析和透射电子显微镜（TEM）图像中没有观察到SBT材料和Si衬底之间的相互扩散。从电容-电压（C-V）测量中，我们观察到阈值滞后（“记忆窗口”）的宽度为1.21 V。在C-V特性的曲线拟合中，C-V曲线与通过米勒方法计算的曲线拟合得相当好。认为这些特性是由于锡永薄膜防止了相互扩散。
A SrBi2Ta2O9 (SBT) thin film was prepared on a SiON/p-Si(100) substrate at a process temperature of 700°C. Interdiffusion between the SBT material and Si substrate was not observed in X-ray photoelectron spectroscopy (XPS) analysis and in the transmission electron microscope (TEM) image. From the capacitance-voltage (C-V) measurement, we observed the width of the threshold hysteresis (“memory window”) of 1.21 V. In the curve fitting of the C-V characteristics, the C-V curve fitted the curve calculated by the Miller method fairly well. It is considered that these characteristics are due to the prevention of interdiffusion by the SiON thin film.