Ballistic transport in one dimension: additional quantisation produced by an electric field
Ballistic transport in one dimension: additional quantisation produced by an electric field
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一维弹道输运：电场产生的附加量子化
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
J. Perenboom
中科院分区：
文献类型：
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作者：
N. K. Patel;L. Martín;M. Pepper;R. Newbury;J. Frost;D. Ritchie;G. Jones;J. Janssen;J. Singleton;J. Perenboom
实验证据表明，在高直流偏置条件下，弹道一维通道的微分电导中出现了新的平台。在零磁场下，作者观察到了e2/h的微分电导的阶跃，而不是自旋简并的一维子带的2e2/h的常规值。新的平台被发现是在几个百分点的精确度的量化值，并被一个模型很好地描述，该模型假设偏置在一维通道中对称地下降。此外，随着直流偏置的增加，所有的平台消失，这可以用隧道几率的增加来解释。同样的效应在横向磁场中仍然存在，作者能够计算出作为外加磁场的函数的子带间距。
Experimental evidence is presented for the appearance of new plateaux in the differential conductance of a ballistic 1D channel in the high DC bias regime. In zero magnetic field, the authors observe steps in the differential conduction of e2/h, as opposed to the conventional value of 2e2/h for a spin-degenerate 1D subband. The new plateaux are found to be at quantised values to an accuracy of a few per cent and are described well by a model that assumes the bias is dropped symmetrically in the 1D channel. In addition, all the plateaux disappear with increasing DC voltage bias which can be explained in terms of an enhancement of the tunnelling probability. The same effects persist in a transverse magnetic field and the authors are able to calculate subband spacings as a function of the applied magnetic field.