Assessment of lattice strain, rotation and dislocation content using electron back-scatter diffraction
Assessment of lattice strain, rotation and dislocation content using electron back-scatter diffraction
复制标题
使用电子背散射衍射评估晶格应变、旋转和位错含量
DOI：
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
A. Wilkinson
中科院分区：
文献类型：
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作者：
A. Wilkinson
基于互相关的分析方法已经被开发出来用于电子背散射衍射（EBSD）模式，该模式将角灵敏度提高到~ 10−4 rad。这使得EBSD能够用于研究半导体材料中典型的更小的取向偏差甚至局部弹性应变场。晶格旋转和弹性应变变化的映射为通过Nye张量定量分析螺纹位错密度提供了足够的细节。本文将简要介绍该分析以及在GaN和Si/SiGe基系统中的应用。将报告基面蓝宝石上GaN层的倾斜、扭转和弹性应变变化的测量结果，并与一些外延横向过度生长（ELOG） GaN样品的结果进行比较。失配界面位错对部分松弛SiGe层中全应变和旋转张量空间分布的影响也将被显示。
Cross-correlation based analysis methods have been developed for electron back scatter diffraction (EBSD) patterns that improve the angular sensitivity to ∼10−4 rads. This enables EBSD to be used to study the much smaller misorientations and even local elastic strain fields that are typical in semiconducting materials. Mapping of the lattice rotations and elastic strain variations provides sufficient detail for quantitative analysis of the threading dislocation density through the Nye tensor. The analysis will be briefly described and applications given to GaN and Si/SiGe based systems. Measurements of tilt, twist and elastic strain variations in GaN layers on basal plane sapphire will be reported and compared to results for some epitaxial lateral over grown (ELOG) GaN samples. The effects of misfit interfacial dislocations on the spatial distribution of the full strain and rotation tensors in a partially relaxed SiGe layer will also be shown.
DOI：
10.1098/rspa.2009.0455
发表时间：
2010-03
期刊：
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences
影响因子：
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作者：
T. B. Britton;H. Liang;F. Dunne;A. Wilkinson
通讯作者：
T. B. Britton;H. Liang;F. Dunne;A. Wilkinson
影响因子：
2.2
作者：
Britton, T. B.;Maurice, C.;Wilkinson, A. J.
通讯作者：
Wilkinson, A. J.