High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs
High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs
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通过 SPA 自由基氧化和单轴应力工程形成高性能 Ge NMOSFET 的高质量 GeO2/Ge 界面
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
Y. Nishi
中科院分区：
文献类型：
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作者：
M. Kobayashi;T. Irisawa;B. Kope;Yun Sun;K. Saraswat;H. Wong;P. Pianetta;Y. Nishi
Ge的槽面天线（SPA）自由基氧化实现了(1)与取向无关，(2)与温度无关，(3)界面光滑，(4)界面态密度低。首次证实了SPA自由基氧化制备的（100）Ge NFET在单轴应力下迁移率的增强。在弹道输运机制下，（100）Ge NFET的驱动电流在单轴应力下得到增强，满足ITRS 22nm节点作为Ge CMOS平台的高性能要求。
Slot-plane-antenna (SPA) radical oxidation of Ge is shown to realize (1) orientation independent, (2) small temperature dependent oxidation, (3) smooth interface and (4) low interface state density. Mobility enhancement under uniaxial stress was demonstrated in (100) Ge NFET fabricated by utilizing SPA radical oxidation, for the first time. Drive current of (100) Ge NFET can be enhanced under uniaxial stress in the ballistic transport regime, which satisfies ITRS 22 nm node high performance spec as a Ge CMOS platform.