Development of MOCVD Technology for Integrated YBCO Layer/Buffer Layer Fabrication for Coated Conductors
Development of MOCVD Technology for Integrated YBCO Layer/Buffer Layer Fabrication for Coated Conductors
复制标题
DOI：
10.1109/tasc.2009.2018147
复制
发表时间：
2009-06
影响因子：
1.8
通讯作者：
A. Molodyk;M. Novozhilov;S. Bitkowsky;S. Street;A. Delaney;L. Castellani;A. Ignatiev
中科院分区：
文献类型：
--
作者：
A. Molodyk;M. Novozhilov;S. Bitkowsky;S. Street;A. Delaney;L. Castellani;A. Ignatiev
所有缓冲层和 YBCO 层的化学沉积被认为是涂层导体制造最经济的方法。 Metal Oxide Technologies Inc. (MetOx) 一直在开发一种经济高效的技术，通过 MOCVD 沉积所有缓冲层和超导层。在 ORNL RABiTS 缓冲液上获得高 Ic = 201 A/cm 和 Jc = 1.53 MA/cm2 值。 MetOx YBCO 薄膜的最佳超导性能在 LANL IBAD 缓冲器上实现，Jc = 3.34 MA/cm2 和 Ic = 480 A/cm。 MetOx MOCVD 涂层导体表现出良好的 Ic = 137 A/cm 和 Jc = 1.10 MA/cm2。数条 1 m 长的 YBCO 带材已表现出良好的超导性能。通过在 YBCO 中掺杂 Y2O3 实现钉扎增强已成功实现。 1.25 mm/min 的极高 MOCVD 生长速率已被证明可以生产出纹理良好的超导 YBCO 薄膜。
Chemical deposition of all buffer and YBCO layers is recognized as the most economical approach to coated conductor manufacturing. Metal Oxide Technologies Inc. (MetOx) has been developing a cost-effective technology to deposit all buffer and superconducting layers by MOCVD. High Ic = 201 A/cm and Jc = 1.53 MA/cm2 values are obtained on ORNL RABiTS buffers. The best superconducting properties of MetOx YBCO films of Jc = 3.34 MA/cm2 and Ic = 480 A/cm have been achieved on LANL IBAD buffers. MetOx MOCVD coated conductors demonstrate promising Ic = 137 A/cm and Jc = 1.10 MA/cm2. Good superconducting performance has been demonstrated on several 1 m long YBCO tapes. Pinning enhancement via Y2O3 doping in YBCO has been successfully implemented. Very high MOCVD growth rates of 1.25 mum/min have been demonstrated producing well-textured superconducting YBCO films.