Solubility and Diffusion Coefficient of Electrically Active Titanium in Silicon
Solubility and Diffusion Coefficient of Electrically Active Titanium in Silicon
复制标题
电活性钛在硅中的溶解度和扩散系数
DOI：
--
复制
发表时间：
1991
期刊：
影响因子：
--
通讯作者：
H. Nakashima
中科院分区：
文献类型：
--
作者：
S. Kuge;H. Nakashima
通过深能级瞬态光谱（DLTS）研究了钛在硅中的深层杂质水平和溶解度。发现钛形成多能级，受体能级为EC-0.09 V，施主能级为EC-0.27 eV，双施主能级为EV+0.28 eV。溶解度与绝对温度倒数的函数关系显示出良好的直线，活化能为 3.8 eV。扩散系数在 1050-1150°C 高温范围和 600-800°C 较低温度范围内确定。扩散系数用DTi=1.2×10-1 exp (-2.05/kT) cm2 s-1 表示。
The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of EC-0.09 V, a donor level of EC-0.27 eV and a double-donor level of EV+0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi=1.2×10-1 exp (-2.05/kT) cm2 s-1.