Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors
Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors
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GaAs 半导体中亚微米 MnAs 铁磁体的单轴磁各向异性
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
H. Tanoue
中科院分区：
文献类型：
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作者：
K. Ando;A. Chiba;H. Tanoue
通过Mn+离子注入和随后在920℃氮气中热处理1 s，成功地将亚微米（100-500 nm）室温MnAs铁磁体嵌入到GaAs半导体衬底中。原子力显微镜显示了[0001]取向六方MnAs晶体在（001）GaAs衬底上的外延关系：[11 20]MnAs∥[110]GaAs。较小的晶体沿[110]GaAs的形状各向异性更强。超导量子干涉装置的磁性表征揭示了样品的单轴面内磁性各向异性。磁力显微镜成像显示，单轴磁各向异性来自于磁偶极子沿MnAs的磁易[11 20]轴的排列，与[110]GaAs平行。
Submicron (100–500 nm) room-temperature ferromagnets of MnAs have been successfully incorporated into GaAs semiconductor substrates by Mn+ ion implantation and subsequent heat treatment at 920 °C for 1 s in a nitrogen gas. Atomic force microscopy indicates an epitaxial relation of [0001] oriented hexagonal MnAs crystallites on (001) GaAs substrates: [11 20]MnAs∥[110]GaAs. A stronger shape anisotropy along [110]GaAs is observed for the smaller crystallites. Magnetic characterizations by superconducting quantum interference device reveal uniaxial in-plane magnetic anisotropy of the sample. Magnetic force microscopy imaging shows that the uniaxial magnetic anisotropy comes from the alignment of magnetic dipoles along the magnetic easy [11 20] axis of MnAs, which is parallel to [110]GaAs.