Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures
Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures
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DOI：
10.1002/aelm.202200567
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发表时间：
2022-08
影响因子：
6.2
通讯作者：
R. Böckle;M. Sistani;Martina Bažíková;L. Wind;Zahra Sadre‐Momtaz;M. D. den Hertog;Corban G. E. Murphey;J. Cahoon;W. Weber
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文献类型：
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作者：
R. Böckle;M. Sistani;Martina Bažíková;L. Wind;Zahra Sadre‐Momtaz;M. D. den Hertog;Corban G. E. Murphey;J. Cahoon;W. Weber
金属半导体异质结构提供几何上可复制和突变的肖特基纳米结是新兴电子技术实现的高度期望。这特别适用于可重构场效应晶体管，即使在运行期间也能够在n型或p型之间动态改变工作模式。为了提高制造的可重复性和工作模式之间的电平衡，本文实现了一种具有单基本、单晶铝引线和尖锐肖特基结的纳米级Al - Si - Al纳米线异质结构。利用三顶栅极架构，可以在晶体管级上重新配置。在设计对称导通电流以及n型和p型操作的阈值电压作为开发互补可重构电路的必要要求之后，报告了逻辑门的选择实现，如逆变器和组合有线与门。在这方面，利用所提出的多栅极晶体管架构的优势并提供额外的逻辑输入，可以通过将单个晶体管转换为逻辑门来扩展器件功能。重要的是，所展示的Al - Si材料体系及其逻辑门显示出与最先进的互补金属氧化物半导体技术的高度兼容性。此外，利用器件级的重新配置，该平台可能为未来低功耗、低占地面积的自适应计算系统铺平道路，从而实现新的电路范例。
Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field‐effect transistors, capable of dynamically altering the operation mode between n‐ or p‐type even during run‐time. Targeting the enhancement of fabrication reproducibility and electrical balancing between operation modes, here a nanoscale Al‐Si‐Al nanowire heterostructure with single elementary, monocrystalline Al leads and sharp Schottky junctions is implemented. Utilizing a three top‐gate architecture, reconfiguration on transistor level is enabled. Having devised symmetric on‐currents as well as threshold voltages for n‐ and p‐type operation as a necessary requirement to exploit complementary reconfigurable circuits, selected implementations of logic gates such as inverters and combinational wired‐AND gates are reported. In this respect, exploiting the advantages of the proposed multi‐gate transistor architecture and offering additional logical inputs, the device functionality can be expanded by transforming a single transistor into a logic gate. Importantly, the demonstrated Al‐Si material system and thereof shown logic gates show high compatibility with state‐of‐the‐art complementary metal‐oxide semiconductor technology. Additionally, exploiting reconfiguration at the device level, this platform may pave the way for future adaptive computing systems with low‐power consumption and reduced footprint, enabling novel circuit paradigms.