Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization
Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization
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DOI：
10.1063/1.2745398
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发表时间：
2007-06-01
影响因子：
3.2
通讯作者：
Cristoloveanu, S.
中科院分区：
文献类型：
--
作者：
Hamaide, G.;Allibert, F.;Cristoloveanu, S.
以前有报道[N.]Bresson， ECS第七届绝缘体上硅技术与器件国际研讨会论文集，2005年（未发表），第317-324页；F Allibert, Proceedings of IEEE International SOI Conference, Honolulu， HI, 2002（未发表）]，薄膜厚度对使用通常的场效应晶体管方程提取的伪金属氧化物半导体场效应晶体管（pseudo- mosfet）参数有很大影响[S]。Cristoloveanu和s.s. Li， SOI材料和器件的电特性（Kluwer, Boston， MA, 1995）。在本文中，我们通过比较钝化和未钝化样品，研究了顶部自由表面状态对伪mosfet特性的影响。这里研究的相关参数是载流子迁移率、界面态密度、阈值（V-T）和平带（V-FB）电压。基于系统测量和现有模型[H]。J. Hovel, Solid-State Electron. 47, 1311(2003)]对于V-T， V-FB和亚阈值斜率，我们展示了自由表面冲击如何随着薄膜厚度的减小而增加。提取结果与模拟曲线的比较表明，在最新的超薄硅绝缘子结构中，自由表面的制备和性能不再是可以忽略不计的。(c) 2007年美国物理学会。
It has been reported previously [N. Bresson , Proceedings of the ECS Seventh International Symposium on Silicon-on-Insulator Technology and Devices, 2005 (unpublished), pp. 317-324; F Allibert , Proceedings of the IEEE International SOI Conference, Honolulu, HI, 2002 (unpublished)] that the film thickness strongly impacts the parameters extracted using the pseudo metal oxide semiconductor field effect transistor (pseudo-MOSFET) with the usual FET equations [S. Cristoloveanu and S. S. Li, Electrical Characterization of SOI Materials and Devices (Kluwer, Boston, MA, 1995)]. In this paper, we investigate the influence of top free-surface states on the pseudo-MOSFET characteristics by comparing passivated versus nonpassivated samples. The parameters of concern, investigated here, are carrier mobility, density of interface states, threshold (V-T), and flatband (V-FB) voltages. Based on systematic measurements and existing models [H. J. Hovel, Solid-State Electron. 47, 1311 (2003)] for V-T, V-FB, and subthreshold slope, we show how the free-surface impact increases as the film thickness is reduced. Comparison of extracted results with simulated curves demonstrates that, in state-of-the-art ultrathin silicon on insulator structures, the preparation and properties of the free surface are no longer negligible. (c) 2007 American Institute of Physics.