Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
复制标题
铝顶电极氧化铜基阻变存储器的耐久性增强
DOI：
10.1063/1.3142392
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发表时间：
2009-05-25
影响因子：
4
通讯作者：
Chi, M. H.
中科院分区：
文献类型：
--
作者：
Lv, Hangbing;Wang, Ming;Chi, M. H.
我们研究了具有Al、Pt和Ti电极的Cu氧化物薄膜的开关性能。与Pt电极相比，Al电极具有更好的稳定性、更好的耐久性和更大的电阻比。通过透射电子显微镜和俄歇电子能谱检测界面AlOx层。该层可以强烈地影响氧空位的移动。而纯钛电极的样品几乎没有开关特性。Ti/TiN电极具有较好的开关特性。Ti层的厚度控制是非常关键的。因此，我们认为氧在电极中的扩散是影响开关性能的另一个重要因素。与Pt电极相比，Al电极具有更好的稳定性、更好的耐久性和更大的电阻比。通过透射电子显微镜和俄歇电子能谱检测界面AlOx层。该层可以强烈地影响氧空位的移动。而纯钛电极的样品几乎没有开关特性。Ti/TiN电极具有较好的开关特性。Ti层的厚度控制是非常关键的。因此，我们认为氧在电极中的扩散是影响开关性能的另一个重要因素。
We investigated the switching performance of Cu-oxide films with Al, Pt, and Ti electrodes. Compared with Pt electrode, the Al electrode shows better stability, preferable endurance, and larger resistance ratio. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. However, the sample with pure Ti electrode almost has no switching characteristics. Ti/TiN electrode with thin Ti exhibits good switching behavior. The thickness control of Ti layer is quite critical. So we suggest that the oxygen diffusion in electrode is another important factor for switching performance.We investigated the switching performance of Cu-oxide films with Al, Pt, and Ti electrodes. Compared with Pt electrode, the Al electrode shows better stability, preferable endurance, and larger resistance ratio. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. However, the sample with pure Ti electrode almost has no switching characteristics. Ti/TiN electrode with thin Ti exhibits good switching behavior. The thickness control of Ti layer is quite critical. So we suggest that the oxygen diffusion in electrode is another important factor for switching performance.