Short channel, CMOS-compatible JFET in low noise applications☆
Short channel, CMOS-compatible JFET in low noise applications☆
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低噪声应用中的短沟道、CMOS 兼容 JFET☆
DOI：
10.1016/0168-9002(93)90333-d
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
A. Tomasini
中科院分区：
文献类型：
--
作者：
W. Buttler;G. Lutz;G. Cesura;P. Manfredi;V. Speziali;A. Tomasini
采用cmos兼容技术，实现了栅极长度为1.6 μm的n沟道JFET。这种器件旨在作为开发新型大带宽低噪声电路的基本前端元件。本文介绍了有关小信号行为、噪声谱密度和对吸收辐射的噪声灵敏度的完整器件特性的结果。讨论了采用短通道JFET作为输入元件的一些单片电路的性能，其中包括针对不同检测器电容定制的前置放大器、用于微带检测器的整个模拟处理器和多通道前置放大器系统。
An N-channel JFET with 1.6 μm gate length has been realised in the CMOS-compatible technology. Such a device is intended as the basic front-end element in the development of new low noise circuits of large bandwidth. This paper presents the results of a full device characterisation concerning small signal behaviour, noise spectral densities and noise sensitivities to absorbed radiation. The performances of some monolithic circuits employing the short channel JFET as an input element, among them preamplifiers tailored to different detector capacitances, an entire analog processor for microstrip detectors and a multichannel preamplifier system are discussed.