Ductile-brittle transition in micropillar compression of GaAs at room temperature
Ductile-brittle transition in micropillar compression of GaAs at room temperature
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DOI：
10.1080/14786435.2010.509286
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发表时间：
2011-01-01
影响因子：
1.6
通讯作者：
Michler, Johann
中科院分区：
文献类型：
--
作者：
Oestlund, Fredrik;Howie, Philip R.;Michler, Johann
实验研究了< 100 >轴向GaAs微柱的直径对其室温压缩破坏的影响。在所有微柱中观察到滑移，通常在相交的滑移面上。裂纹可能在这些交叉点处成核，然后在样品中轴向生长，伴随裂纹生长的爆发。然而，直径小于约1 μ m的GaAs微柱没有分裂，也没有分裂观察到的滑移发生在只有一个平面上。通过修改现有分析，对可能发生此类拆分的条件进行了估计。这预示着在微柱直径约为1 μ m，与实验观察一致的延性-脆性转变。
Experiments have been carried out on how compressive failure of < 100 > axis GaAs micropillars at room temperature is influenced by their diameter. Slip was observed in all micropillars, often on intersecting slip planes. Cracks could nucleate at these intersections and then grow axially in the sample, with bursts of crack growth. However, GaAs micropillars with diameters less than approximately 1 mu m did not split, nor was splitting observed where slip occurred on only one plane. The conditions under which such splitting can occur have been estimated by modifying an existing analysis. This predicts a ductile-brittle transition at a micropillar diameter of approximately 1 mu m, consistent with experimental observations.