TEM analysis of threading dislocations in crack‐free AlxGa1−xN grown on an AlN(0001) template
TEM analysis of threading dislocations in crack‐free AlxGa1−xN grown on an AlN(0001) template
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在 AlN(0001) 模板上生长的无裂纹 AlxGa1−xN 中螺纹位错的 TEM 分析
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
T. Shibata
中科院分区：
文献类型：
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作者：
N. Kuwano;T. Tsuruda;Yoshihiro Kida;H. Miyake;K. Hiramatsu;T. Shibata
进行截面透射电子显微镜 (TEM) 观察，以了解在 AlN/α-蓝宝石 (0001) 模板上外延生长的 AlxGa1−xN 层中穿透位错 (TD) 的行为。在AlN模板中，具有c分量、或c型和/或(a+c)型的TD被湮灭，使得保留在AlN模板上部区域中的大部分TD为a型。在 AlN 模板上生长的 AlxGa1−xN (x = 0) 层中，成对的 TD 在 GaN/AlN 异质界面处或上方很快消失。在 AlxGa1−xN (x = 0.27, 0.61) 的情况下，TD 渗透到 AlxGa1−xN 层中，并且其中一些被布置为束缚在距异质界面数百 nm 的区域中。 TD排列区域的高度和幸存的TD的数量随着Al含量x的增加而增加。这些现象表明，由于 AlxGa1−xN 和 AlN 之间的晶格失配，TD 被应力消灭。
Cross sectional transmission electron microscope (TEM) observation was performed to understand the behavior of threading dislocations (TDs) in an AlxGa1−xN layer epitaxially grown on an AlN/α-sapphire (0001) template. In the AlN template, TDs with c-component, or c-type and/or (a + c)-type, are annihilated so that most of the TDs remaining in the upper region of the AlN template are of a-type. In an AlxGa1−xN (x = 0) layer grown on the AlN template, pairs of the TDs are annihilated very quickly at or just above the hetero-interface of GaN/AlN. In the case of AlxGa1−xN (x = 0.27, 0.61), TDs penetrate into the AlxGa1−xN layer and some of these are arranged to be tied-up in the region several hundreds nm from the hetero-interface. The height of the region where TDs are arranged and the number of surviving TDs increase with the Al content x. These phenomena show that the TDs are annihilated by stress due to lattice mismatch between AlxGa1−xN and AlN.