Novel Shielded Coplanar Waveguides on GaN-on-Low Resistivity Si Substrates for MMIC Applications
Novel Shielded Coplanar Waveguides on GaN-on-Low Resistivity Si Substrates for MMIC Applications
复制标题
用于 MMIC 应用的低电阻率硅衬底上 GaN 的新型屏蔽共面波导
DOI：
--
复制
发表时间：
2015
影响因子：
3
通讯作者：
K. Elgaid
中科院分区：
文献类型：
--
作者：
A. Eblabla;D. Wallis;I. Guiney;K. Elgaid
首次在低电阻率硅（LR-Si）衬底（σ<;40 Ω·cm）上成功研制了用于射频GaN的低损耗屏蔽-抬高共面波导（SE-CPW）。所开发的SE-CPW在X波段的传输损耗（S21）小于0.4 dB/mm，在K波段的传输损耗（S21）优于2 dB/mm，回波损耗小于20 dB，使其在性能上与传统（半绝缘）SI基板相当。开发的波导使用空气桥技术将CPW轨道悬挂在LR-Si上的HEMT GaN层上方，直接位于附加的SiN薄层和屏蔽接地层上方。采用电磁仿真的方法对结构参数进行调整，以达到性能优化的目的。在这项工作中，我们消除了耦合到衬底中的RF能量，为LR-Si上具有成本效益和更高集成度的GaN MMIC铺平了道路。
Shielded-Elevated Coplanar Waveguides (SE-CPWs) with low loss have been successfully developed for the first time for RF GaN on low-resistivity silicon (LR-Si) substrates (σ<;40 Ω·cm). Transmission losses (S21) of less than 0.4 dB/mm at X-band and better than 2 dB/mm at K-band with less than 20 dB return loss were exhibited by the developed SE-CPW, making them comparable in performance to those on traditional (semi-insulating) SI substrates. The developed waveguides use air-bridge technology to suspend CPW tracks above the HEMT GaN layer on LR-Si, directly above an additional thin layer of SiN and shielded ground planes. EM simulation was used to adjust structure parameters for performance optimization. In this work, we eliminated RF energy coupled into the substrate, paving the way for a cost-effective and higher integration GaN MMICs on LR-Si.